AON7788 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 40a r ds(on) (at v gs =10v) < 4.5m ? r ds(on) (at v gs = 4.5v) < 5.3m ? 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc parameter maximum units 30v srfet tm AON7788 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 30 v gate-source voltage 12 v 20 a t c =100c 31 pulsed drain current c 150 continuous drain current g t c =25c i d 40 14 a t a =70c 16 avalanche current c 35 a continuous drain current t a =25c i dsm c avalanche energy l=0.1mh c 61 mj power dissipation b t c =25c p d 36 w t c =100c power dissipation a t a =25c p dsm 3.1 w t a =70c 2 30 40 junction and storage temperature range -55 to 150 thermal characteristics parameter typ max c/w units maximum junction-to-ambient a maximum junction-to-ambient a d 60 75 c/w r ja maximum junction-to-case 2.8 3.4 c/w srfet tm g d s srfet tm s oft r ecovery mos fet : integrated schottky diode top view 1 2 3 4 8 7 6 5 dfn 3x3_ep top view bottom view pin 1 rev 0 : jan 2011 www.aosmd.com page 1 of 7
AON7788 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.2 1.6 2 v i d(on) 150 a 3.7 4.5 t j =125c 5.5 6.6 4.2 5.3 m ? ? q g (4.5v) 19 24 29 nc q gs 6.6 nc q gd 10 nc t d(on) 9ns t r 4.5 ns t d(off) 47 ns t f 5.5 ns t rr 81012ns q rr 12 15 18 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v ds =v gs i d =250 a on state drain current drain-source breakdown voltage i d =10ma, v gs =0v v gs =10v, v ds =5v electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters diode forward voltage i s =1a,v gs =0v m ? v gs =4.5v, i d =20a i dss zero gate voltage drain current ma gate-body leakage current v ds =0v, v gs = 12v r ds(on) static drain-source on-resistance v gs =10v, i d =20a forward transconductance v ds =5v, i d =20a maximum body-diode continuous current g dynamic parameters output capacitance reverse transfer capacitance input capacitance v gs =0v, v ds =15v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz body diode reverse recovery charge i f =20a, di/dt=500a/ s switching parameters v gs =10v, v ds =15v, id=20a total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ s a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev 0 : jan 2011 www.aosmd.com page 2 of 7
AON7788 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 2 4 6 8 10 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 10v 3v 4.5v rev 0 : jan 2011 www.aosmd.com page 3 of 7
AON7788 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 102030405060 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 s r jc =3.4c/w rev 0 : jan 2011 www.aosmd.com page 4 of 7
AON7788 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r ja =75c/w rev 0 : jan 2011 www.aosmd.com page 5 of 7
AON7788 typical electrical and thermal characteristic s 0 5 10 15 20 25 0 5 10 15 20 25 30 i s (a) figure 19: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 10 12 i rm (a) di/dt=800a/ s 125oc 125oc 25oc 25oc q rr i rm 0 5 10 15 20 25 0 200 400 600 800 1000 di/dt (a/ s) figure 21: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 2 4 6 8 10 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 2 4 6 8 10 12 0 5 10 15 20 25 30 i s (a) figure 20: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 2.5 3 3.5 4 s di/dt=800a/ s 125oc 125oc 25oc 25oc t rr s 0 3 6 9 12 15 18 0 200 400 600 800 1000 di/dt (a/ s) figure 22: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 s 125oc 25oc 25oc 125oc i s =20a t rr s 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 17: diode reverse leakage current vs. junction temperature i r (a) v ds =15v v ds =30v 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 25 50 75 100 125 150 175 200 temperature (c) figure 18: diode forward voltage vs. junction temperature v sd (v) i s =1a 10a 20a 5a rev 0 : jan 2011 www.aosmd.com page 6 of 7
AON7788 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0 : jan 2011 www.aosmd.com page 7 of 7
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